Ipuleti le-Silicon Carbide Umshini Wokugaya Ongaphezulu Okabili Isixazululo

Imodeli Yomshini: YHDM580B I-Double Disk Grinder- Indlela Yokugaya Umjikelezo

Umsebenzi: I-Silicon Carbide Plate(SiC)

Isidingo: 7.150±0.002mm, Ukucaba/Ukufana＜0.01mm, Ukuqina KweRa＜0.9

I-Silicon Carbide (i-SiC) iyinto engaphili enemishini, eshisayo, kagesi namakhemikhali, ngenxa yokuthi isetshenziswa kakhulu ezimbonini ezithuthukisiwe. Kodwa-ke, izici ezizuzisayo ze-SiC ceramic njengokuqina okuphezulu, amandla aphezulu, ukumelana nokugqoka, ukuqina okwedlulele kanye nokuzinza kwamakhemikhali kwenza umshini we-SiC ube nzima futhi ubize ngokusebenzisa izindlela ezijwayelekile nezingezona ezejwayelekile. Isondo lokugaya idayimane likhiqiza i-MRR ephezulu ayithinti i-surface morphology kanye nokuqedwa. Ngesikhathi sokugaywa kwe-SiC izinto ezibonakalayo zesondo ne-workpiece ziyisici esibalulekile sokubikezela uku-roughness komhlaba. Emshinini wokugaya izinombolo wokulawula izinombolo ngokusebenzisa amathuluzi edayimane ebhondi yensimbi adala umonakalo odalwe kancane. I-micro-structural heterogeneity inyusa ngokuphawulekayo amazinga okumba nokugaya kwe-SiC. Ukwanda kokuqina kokuphuka okuguquguqukayo kuholele ekubeni i-MRR ephezulu ye-SiC ibe nokuqedwa okungcono kwangaphezulu kwafinyelelwa ngenqubo yokugaya ngesivinini esikhulu. Ezindleleni zokugaya ngokusebenzisa amasondo abrasive aboshiwe ubuhwaqane obuphansi kanye nokunemba komumo okuphezulu okutholakala ezibukweni ze-SiC. Inhlanganisela yejubane eliphezulu le-workpiece kanye nesivinini sesondo lokugaya eliphakanyisiwe kunganciphisa ukuguqulwa kwesigaba esibonwa ngesikhathi senqubo yokugaya isilinda esinesivinini esikhulu.